Publications in Scientific Journals:
M. Leitgeb, Ch. Zellner, M. Schneider, U. Schmid:
"A Combination of Metal Assisted Photochemical and Photoelectrochemical Etching for Tailored Porosification of 4H SiC Substrates";
ECS Journal of Solid State Science and Technology,
5
(2016),
10;
556
- 564.
English abstract:
Porous 4H-SiC layers were prepared with a tailored sequence of metal assisted photochemical etching (MAPCE) and photoelectrochemical
etching (PECE) steps. Porous layers resulting from MAPCE provided initiation sites for a subsequent PECE process.
Finally, the porosity of the porous layers was increased to the desired degree with a second MAPCE step. By applying this sequence,
the problem of skin and cap layer formation occurring during pure PECE is avoided. In addition, layers with a homogeneous porosity
depth profile are obtained, which is not possible when only pure PECE is applied.
German abstract:
Porous 4H-SiC layers were prepared with a tailored sequence of metal assisted photochemical etching (MAPCE) and photoelectrochemical
etching (PECE) steps. Porous layers resulting from MAPCE provided initiation sites for a subsequent PECE process.
Finally, the porosity of the porous layers was increased to the desired degree with a second MAPCE step. By applying this sequence,
the problem of skin and cap layer formation occurring during pure PECE is avoided. In addition, layers with a homogeneous porosity
depth profile are obtained, which is not possible when only pure PECE is applied.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1149/2.0041610jss
Created from the Publication Database of the Vienna University of Technology.