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Publications in Scientific Journals:

T. Frischmuth, M. Schneider, D. Maurer, Th. Grille, U. Schmid:
"Inductively-coupled plasma-enhanced chemical vapour deposition ofhydrogenated amorphous silicon carbide thin films for MEMS";
Sensors and Actuators A: Physical, 247 (2016), 647 - 655.



English abstract:
In this study, the impact of various deposition parameters such as the reactive gas flow ratio, plasmapower, substrate temperature and chamber back pressure of ICP-CVD deposited a-SiC:H thin films isinvestigated and the influence on important MEMS-related properties like residual stress, Young´s mod-ulus, hardness, mass density and refractive index is evaluated. Basically, tailoring of the as-depositeda-SiC:H characteristics is possible to a great extent with residual stress values ranging from −16 up to−808 MPa, Young´s modulus values between 36 and 209 GPa or deposition of layers with hardness val-ues ranging from 5.3 to 27.2 GPa is feasible. Especially the mechanical parameters are strongly linked toboth the Si C bond density and the amount of incorporated hydrogen obtained from Fourier transforminfrared spectroscopy analyses.

German abstract:
In this study, the impact of various deposition parameters such as the reactive gas flow ratio, plasmapower, substrate temperature and chamber back pressure of ICP-CVD deposited a-SiC:H thin films isinvestigated and the influence on important MEMS-related properties like residual stress, Young´s mod-ulus, hardness, mass density and refractive index is evaluated. Basically, tailoring of the as-depositeda-SiC:H characteristics is possible to a great extent with residual stress values ranging from −16 up to−808 MPa, Young´s modulus values between 36 and 209 GPa or deposition of layers with hardness val-ues ranging from 5.3 to 27.2 GPa is feasible. Especially the mechanical parameters are strongly linked toboth the Si C bond density and the amount of incorporated hydrogen obtained from Fourier transforminfrared spectroscopy analyses.

Keywords:
Silicon carbideInductively coupledMEMSResidual stressYoung´s modulusHardnessFourier transform infrared spectroscopya


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.sna.2016.05.042


Created from the Publication Database of the Vienna University of Technology.