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Zeitschriftenartikel:

T. Frischmuth, M. Schneider, D. Maurer, Th. Grille, U. Schmid:
"High temperature annealing effects on the chemical and mechanical properties of inductively-coupled plasma-enhanced chemical vapor deposited a-SiC:H thin films";
Thin Solid Films, 611 (2016), S. 6 - 11.



Kurzfassung deutsch:
This paper reports the impact of thermal annealing up to temperatures of 1200 °C on the chemical and mechanical
properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films. These layers were deposited
using an inductively-coupled plasma-enhanced chemical vapor deposition process with methane, silane and
argon as precursor gases. The results of mass effusion measurements up to 1000 °C are presented and the
temperature-dependent effusion characteristics are compared to changes in the Fourier-transforminfrared spectra.
Furthermore, a simple method is presented that enables us to detect the onset of nanocrystallization in the a-
SiC:H films caused by the high temperature annealing. The changes in chemical and crystallographic properties
are discussed and related to the mechanical thin film properties, such as a substantial increase in Young's modulus
from176 up to 267 GPa, in hardness from 24 up to 34.5 GPa, aswell as in residual film stress from−683 up
to+3800MPa. Additionally, the decrease in layer thickness to about 70% of the initial value and the increase in
refractive index from 2.33 to 2.78 are explained.

Kurzfassung englisch:
This paper reports the impact of thermal annealing up to temperatures of 1200 °C on the chemical and mechanical
properties of hydrogenated amorphous silicon carbide (a-SiC:H) thin films. These layers were deposited
using an inductively-coupled plasma-enhanced chemical vapor deposition process with methane, silane and
argon as precursor gases. The results of mass effusion measurements up to 1000 °C are presented and the
temperature-dependent effusion characteristics are compared to changes in the Fourier-transforminfrared spectra.
Furthermore, a simple method is presented that enables us to detect the onset of nanocrystallization in the a-
SiC:H films caused by the high temperature annealing. The changes in chemical and crystallographic properties
are discussed and related to the mechanical thin film properties, such as a substantial increase in Young's modulus
from176 up to 267 GPa, in hardness from 24 up to 34.5 GPa, aswell as in residual film stress from−683 up
to+3800MPa. Additionally, the decrease in layer thickness to about 70% of the initial value and the increase in
refractive index from 2.33 to 2.78 are explained.

Schlagworte:
Hydrogenated amorphous silicon carbide (a-SiC:H) Annealing Mass effusion Fourier transforminfrared spectroscopy (FT-IR) Young's modulus Hardness Residual stress Microstructure


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.tsf.2016.05.001


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.