Publications in Scientific Journals:
M. Leitgeb, A. Backes, Ch. Zellner, M. Schneider, U. Schmid:
"Communication-The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide";
ECS Journal of Solid State Science and Technology,
5
(2016),
3;
148
- 150.
English abstract:
Porous 4H-SiC layers were fabricated by photochemical etching of n-type 4H-SiC samples with varying resistivity. An etching
solution of Na2S2O8 and HF was used while Pt deposited at the 4H-SiC surface served as catalyst for the reduction of Na2S2O8.
The contact resistance at the Pt/4H-SiC junction was decreased by annealing and surface near phosphorous doping. This enabled the
porosification of 4H-SiC with photochemical etching.
German abstract:
Porous 4H-SiC layers were fabricated by photochemical etching of n-type 4H-SiC samples with varying resistivity. An etching
solution of Na2S2O8 and HF was used while Pt deposited at the 4H-SiC surface served as catalyst for the reduction of Na2S2O8.
The contact resistance at the Pt/4H-SiC junction was decreased by annealing and surface near phosphorous doping. This enabled the
porosification of 4H-SiC with photochemical etching.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1149/2.0021603jss
Created from the Publication Database of the Vienna University of Technology.