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A. Backes, A. Bittner, M. Leitgeb, U. Schmid:
"Influence of metallic catalyst and doping level on the metal assisted chemical etching of silicon";
Scripta Materialia, 114 (2016), 27 - 30.

The presented work shows a study of the boundary condition between metal and silicon, in metal assisted chemical
etching. This is achieved by varying silicon doping type and concentration as well asmetal type and oxidation
agent concentration. First, the etch rate dependence of silver particles, on n- and on p-doped samples is investigated
revealing different etch rates depending on doping concentration.Additional experiments using an etch solution
containing no oxidation agent show an impact of the metal-semiconductor combination on the etch
process. In this case the higher work function of Pt particles compared to Ag leads to an etching independent
of silicon doping.

The presented work shows a study of the boundary condition between metal and silicon, in metal assisted chemical
etching. This is achieved by varying silicon doping type and concentration as well asmetal type and oxidation
agent concentration. First, the etch rate dependence of silver particles, on n- and on p-doped samples is investigated
revealing different etch rates depending on doping concentration.Additional experiments using an etch solution
containing no oxidation agent show an impact of the metal-semiconductor combination on the etch
process. In this case the higher work function of Pt particles compared to Ag leads to an etching independent
of silicon doping.

Metal assisted chemical etching Silver particles Platinum particles Etch rate Doping concentration