Publications in Scientific Journals:
Yu. Illarionov, T. Knobloch, M. Waltl, G. Rzepa, A. Pospischil, D.K Polyushkin, M. M. Furchi, T. Müller, T. Grasser:
"Energetic Mapping of Oxide Traps in MoS2 Field-Effect Transistors";
2D Materials,
4
(2017),
2;
025108-1
- 025108-10.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/2053-1583/aa734a
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Illarionov_1.pdf
Created from the Publication Database of the Vienna University of Technology.