Talks and Poster Presentations (with Proceedings-Entry):
G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"On the Subthreshold Drain Current Sweep Hysteresis of 4H-SiC nMOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, CA, USA;
2016-12-03
- 2016-12-07; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2016),
ISBN: 978-1-5090-3902-9;
10.8.1
- 10.8.4.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2016.7838392
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/CP2017_Rzepa_06.pdf
Created from the Publication Database of the Vienna University of Technology.