Publications in Scientific Journals:
Yu. Illarionov, M. Waltl, G. Rzepa, T. Knobloch, J. Kim, D. Akinwande, T. Grasser:
"Highly-Stable Black Phosphorus Field-Effect Transistors with Low Density of Oxide Traps";
npj 2D Materials and Applications,
1
(2017),
1;
23-1
- 23-7.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1038/s41699-017-0025-3
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Illarionov_3.pdf
Created from the Publication Database of the Vienna University of Technology.