Talks and Poster Presentations (with Proceedings-Entry):
V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
"Modeling of Electrical Activation Ratios of Phosphorus and Nitrogen Doped Silicon Carbide";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Kamakura, Japan;
2017-09-07
- 2017-09-09; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2017),
ISBN: 978-4-86348-612-6;
125
- 128.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.23919/SISPAD.2017.8085280
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/CP2017_Simonka_02.pdf
Created from the Publication Database of the Vienna University of Technology.