Publications in Scientific Journals:
Yu. Illarionov, K. Smithe, M. Waltl, T. Knobloch, E. Pop, T. Grasser:
"Improved Hysteresis and Reliability of MoS2 Transistors With High-Quality CVD Growth and Al2O3 Encapsulation";
IEEE Electron Device Letters,
38
(2017),
12;
1763
- 1766.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/LED.2017.2768602
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Illarionov_4.pdf
Created from the Publication Database of the Vienna University of Technology.