Contributions to Books:
T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, D.K Polyushkin, A. Pospischil, M. M. Furchi, T. Müller, T. Grasser:
"Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors";
in: "Semiconductors, Dielectrics, and Metals for Nanoelectronics 15, Vol.80, No.1",
D. Misra, S. De Gendt, M. Houssa, K. Kita, D. Landheer (ed.);
issued by: The Electrochemical Society;
ECS Transactions,
2017, (invited),
ISBN: 978-1-62332-470-4,
203
- 217.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1149/08001.0203ecst
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Knobloch_2.pdf
Created from the Publication Database of the Vienna University of Technology.