Publications in Scientific Journals:
B. Steindl, T. Jukic, H. Zimmermann:
"Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth";
International Society of Optical Engineering (SPIE),
Vol. 56
(2017),
No. 11;
110501-1
- 110501-3.
English abstract:
Optimizing avalanche photodiodes (APDs) in standard complementary metal-oxide-semiconductor (CMOS) processes is challenging due to fixed doping concentrations of the available wells. A speed-improved APD in pin photodiode CMOS technology for high-sensitivity and high-speed applications using a lateral well modultion-doping technique is presented. The increased operating voltage of the presented device leads to a -3-dB bandwidth of 2.30 GHz with a multiplication factor of 20 for 1-µW optical power. This corresponds to a responsitivity of 7.40 A/W. A multiplication factor of 44,500 was measured at 10-nW optical power. The thick absorption zone leads to an unamplified quantum efficency of 72.2% at 635-nm wavelenght.
Keywords:
avalanche photodiodes, optoelectronic integrated circuits, photodetectors
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1117/1.OE.56.11.110501
Created from the Publication Database of the Vienna University of Technology.