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M. Mitrovic, M. Hofbauer, B. Goll, K. Schneider-Hornstein, R. Swoboda, B. Steindl, K.O. Voss, H. Zimmermann:
"Dependence of Inverter Chain Single-Event Cross Sections on Inverter Spacing in 65 nm Bulk CMOS Technology";
Poster: Radiation Effects on Components & Systems Conference (RADECS), Bremen; 2016-09-19 - 2016-09-23; in: "16th European Conference Radiation and Its Effects on Components and Systems (RADECS) 2016", (2017), ISBN: 978-1-5090-4366-8; 4 pages.

Single-event cross sections of four inverter chains, with uniform inverter spacing ranging from 120 nm to 4µm, were experimentally measured and compared. These inverter chains were irradiated using a focused ion beam. Waveforms of responses were sensed using on-chip wide-bandwidth analog mulitplexers. The outputs of the multiplexers drive the 50 Ω inputs of high speed real-time oscilloscopes used for recording the traces. Cross sections are examined for three different pulse height thresholds, for direct-hit waveforms as well as for waveforms propagated through the chain. We have observed that the cross section of tightly-spaced inverters is considerably smaller for both direct-hits and propagated single-event transients, and increases with incrasing separation by a factor of 10 or more.

single-event transient, single-event effects, heafy ions, charge sharing, analog on-chip measurement, CMOS

http://dx.doi.org/10.1109/RADECS.2016.8093204