Publications in Scientific Journals:
G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique";
Materials Science Forum,
897
(2017),
143
- 146.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.897.143
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2017/JB2017_Grasser_1.pdf
Created from the Publication Database of the Vienna University of Technology.