Publications in Scientific Journals:
C Zarfl, S. Schwab, P Schmid, H. Hutter, U. Schmid:
"Influence of the sputter gas composition on the electromechanicalproperties and on the stability of TiAlNxO1-xthin films";
Sensors and Actuators A: Physical,
267
(2017),
552
- 559.
English abstract:
Sputter deposited TiAlNxO1-xthin films are investigated as potential candidates for high temperaturestrain gauge applications. In this study the influence of the reactive gas atmosphere during depositionon the electromechanical properties is investigated up to 500◦C with a custom-built measurement setupenabling gauge factor determination. It is shown, that TiAlNxO1-xthin films with no oxygen admixtureduring the deposition process show the most promising electromechanical properties. The gauge factordecreases from 3.3 to 2.4 between room temperature and 500◦C, while in this temperature range thelinear temperature coefficient of the electrical resistance has a value of −3.8·10−4K−1. Time-of-flightsecondary mass ion spectrometry measurements are evaluated against the results of electrical resistancemeasurements to estimate the growth of an oxide layer on the surface of the TiAlNxO1-xthin films whenoperated at 500◦C in air.
German abstract:
Sputter deposited TiAlNxO1-xthin films are investigated as potential candidates for high temperaturestrain gauge applications. In this study the influence of the reactive gas atmosphere during depositionon the electromechanical properties is investigated up to 500◦C with a custom-built measurement setupenabling gauge factor determination. It is shown, that TiAlNxO1-xthin films with no oxygen admixtureduring the deposition process show the most promising electromechanical properties. The gauge factordecreases from 3.3 to 2.4 between room temperature and 500◦C, while in this temperature range thelinear temperature coefficient of the electrical resistance has a value of −3.8·10−4K−1. Time-of-flightsecondary mass ion spectrometry measurements are evaluated against the results of electrical resistancemeasurements to estimate the growth of an oxide layer on the surface of the TiAlNxO1-xthin films whenoperated at 500◦C in air.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1016/j.sna.2017.10.028
Created from the Publication Database of the Vienna University of Technology.