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Zeitschriftenartikel:

M. Leitgeb, Ch. Zellner, M. Schneider, S. Schwab, H. Hutter, U. Schmid:
"Metal Assisted Photochemical Etching of 4H Silicon Carbide";
Journal of Physics D: Applied Physics, 50 (2017), S. 1 - 10.



Kurzfassung deutsch:
Metal assisted photochemical etching (MAPCE) of 4H-silicon carbide (SiC) in Na2S2O8/
HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The
formation process of the resulting porous layer is studied with respect to etching time,
concentration and type of oxidizing agent. From the experiments it is concluded that the
porous layer formation is due to electron hole pairs generated in the semiconductor, which
stem from UV light irradiation. The generated holes are consumed during the oxidation of
4H-SiC and the formed oxide is dissolved by HF. To maintain charge balance, the oxidizing
agent has to take up electrons at the Pt/etching solution interface.
Total dissolution of the porous layers is achieved when the oxidizing agent concentration
decreases during MAPCE. In combination with standard photolithography, the definition
of porous regions is possible. Furthermore chemical micromachining of 4 H-SiC at room
temperature is possible.

Kurzfassung englisch:
Metal assisted photochemical etching (MAPCE) of 4H-silicon carbide (SiC) in Na2S2O8/
HF and H2O2/HF aqueous solutions is investigated with platinum as metallic cathode. The
formation process of the resulting porous layer is studied with respect to etching time,
concentration and type of oxidizing agent. From the experiments it is concluded that the
porous layer formation is due to electron hole pairs generated in the semiconductor, which
stem from UV light irradiation. The generated holes are consumed during the oxidation of
4H-SiC and the formed oxide is dissolved by HF. To maintain charge balance, the oxidizing
agent has to take up electrons at the Pt/etching solution interface.
Total dissolution of the porous layers is achieved when the oxidizing agent concentration
decreases during MAPCE. In combination with standard photolithography, the definition
of porous regions is possible. Furthermore chemical micromachining of 4 H-SiC at room
temperature is possible.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/1361-6463/aa8942


Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.