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Publications in Scientific Journals:

M. Leitgeb, Ch. Zellner, Chr. Hufnagl, M. Schneider, S. Schwab, H. Hutter, U. Schmid:
"Stacked Layers of Different Porosity in 4H-SiC Substrates Applying a Photoelectrochemical Approach";
Journal of the Electrochemical Society, 164 (2017), 12; 337 - 347.



English abstract:
Porous 4H-SiC layers were prepared from monocrystalline samples applying photo-electrochemical etching in hydrofluoric acid.
The influence of both current and voltage controlled mode during photo-electrochemical porosification was investigated. It was
found that the resulting degree of porosity, the homogeneity in porosity as well as the pore morphology mainly depend on the
applied voltage, whereas the current level has an almost negligible impact on these important parameters. Based on these results,
it is proposed that the formation of porous SiC during photo-electrochemical etching can be described by fractal growth. Finally
the gathered knowledge allowed to detach the porous 4H-SiC layers, which comprised several sub-layers of alternating degree of
porosity, from the 4H-SiC substrate. Such layers of tailored porosity are key components for several advanced device concepts such
as optical filters or membranes for biological applications.

German abstract:
Porous 4H-SiC layers were prepared from monocrystalline samples applying photo-electrochemical etching in hydrofluoric acid.
The influence of both current and voltage controlled mode during photo-electrochemical porosification was investigated. It was
found that the resulting degree of porosity, the homogeneity in porosity as well as the pore morphology mainly depend on the
applied voltage, whereas the current level has an almost negligible impact on these important parameters. Based on these results,
it is proposed that the formation of porous SiC during photo-electrochemical etching can be described by fractal growth. Finally
the gathered knowledge allowed to detach the porous 4H-SiC layers, which comprised several sub-layers of alternating degree of
porosity, from the 4H-SiC substrate. Such layers of tailored porosity are key components for several advanced device concepts such
as optical filters or membranes for biological applications.


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1149/2.1081712jes


Created from the Publication Database of the Vienna University of Technology.