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M. Leitgeb, Ch. Zellner, M. Schneider, U. Schmid:
"Porous Silicon Carbide for MEMS";
Talk: Eurosensors 2017, Paris, Frankreich; 09-03-2017 - 09-06-2017; in: "Proceedings - Eurosensors 2017, Paris", MDPI, Vol. 1/ Iss. 4 (2017), ISSN: 2504-3900; 1 - 4.

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized
to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt)
was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off.
Etching was performed by immersing the Pt coated samples into an etching solution containing
sodium persulphate and hydrofluoric acid. UV light irradiation was necessary for charge carrier
generation while the Pt served as local cathode. The generated porous areas can be used for the
generation of integrated cavities in the single crystalline SiC substrates when covered with a
chemical vapor deposited thin film of poly-crystalline SiC.

Metal assisted photochemical etching (MAPCE) of 4H Silicon Carbide (SiC) was utilized
to generate locally defined porous areas on single crystalline substrates. Therefore, Platinum (Pt)
was sputter deposited on 4H-SiC substrates and patterned with photolithography and lift off.
Etching was performed by immersing the Pt coated samples into an etching solution containing
sodium persulphate and hydrofluoric acid. UV light irradiation was necessary for charge carrier
generation while the Pt served as local cathode. The generated porous areas can be used for the
generation of integrated cavities in the single crystalline SiC substrates when covered with a
chemical vapor deposited thin film of poly-crystalline SiC.

http://dx.doi.org/10.3390/proceedings1040297