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M. Gillinger, T. Knobloch, M. Schneider, U. Schmid:
"Harsh Environmental Surface Acoustic Wave Temperature Sensor Based on Pure and Scandium doped Aluminum Nitride on Sapphire";
Vortrag: Eurosensors 2017, Paris, Frankreich; 03.09.2017 - 06.09.2017; in: "Proceedings of Eurosensors 2017, Paris", MDPI, Vol. 1/ Iss. 4 (2017), ISSN: 2504-3900; S. 1 - 4.

This paper investigates the performance of surface acoustic wave (SAW) devices as low
power MEMS temperature sensors using reactive sputter deposited aluminum nitride (AlN) and
scandium doped aluminum nitride (AlScN) as piezoelectric layers on sapphire substrates. In detail,
devices with a wavelength of 16 μm are fabricated with both AlN and AlScN films having a resonance
frequency at room temperature of ~354 MHz and ~349 MHz, respectively. The samples are placed in
a furnace and measured in argon atmosphere up to 800 °C. The temperature dependency on the
frequency shows for both materials a linear decrease up to the maximum measured temperature level
resulting in constant temperature coefficients of −27.62 kHz/°C and −27.81 kHz/°C, respectively.

This paper investigates the performance of surface acoustic wave (SAW) devices as low
power MEMS temperature sensors using reactive sputter deposited aluminum nitride (AlN) and
scandium doped aluminum nitride (AlScN) as piezoelectric layers on sapphire substrates. In detail,
devices with a wavelength of 16 μm are fabricated with both AlN and AlScN films having a resonance
frequency at room temperature of ~354 MHz and ~349 MHz, respectively. The samples are placed in
a furnace and measured in argon atmosphere up to 800 °C. The temperature dependency on the
frequency shows for both materials a linear decrease up to the maximum measured temperature level
resulting in constant temperature coefficients of −27.62 kHz/°C and −27.81 kHz/°C, respectively.

http://dx.doi.org/10.3390/proceedings1040341