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M. Schneider, M. DeMiguel-Ramos, A. J. Flewitt, E. Iborra, U. Schmid:
"Scandium Aluminium Nitride-Based Film Bulk Acoustic Resonators";
Vortrag: Eurosensors 2017, Paris, Frankreich; 03.09.2017 - 06.09.2017; in: "Proceedings of Eurosensors 2017, Paris", MDPI, Vol. 1/ Iss. 4 (2017), ISSN: 2504-3900; S. 1 - 4.

Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic
wave devices as filters or delay lines, but also offer exciting opportunities as biological or gas
sensors. In this work, solidly mounted FBARs were manufactured by substituting commonly used
pure aluminium nitride (AlN) by scandium doped aluminium nitride (ScAlN) thin films as the
piezoelectric layer. The ScAlN-based resonators feature a significant improvement of the
electromechanical coupling factor from ~3% to ~12% compared to the pure AlN, while the decreased
stiffness of ScAlN results in a decrease of the quality factor from ~300 to ~100 due to increased
damping losses in the piezoelectric material.

Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic
wave devices as filters or delay lines, but also offer exciting opportunities as biological or gas
sensors. In this work, solidly mounted FBARs were manufactured by substituting commonly used
pure aluminium nitride (AlN) by scandium doped aluminium nitride (ScAlN) thin films as the
piezoelectric layer. The ScAlN-based resonators feature a significant improvement of the
electromechanical coupling factor from ~3% to ~12% compared to the pure AlN, while the decreased
stiffness of ScAlN results in a decrease of the quality factor from ~300 to ~100 due to increased
damping losses in the piezoelectric material.

http://dx.doi.org/10.3390/proceedings1040305