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A. Dabsch, C. Rosenberg, M. Stifter, F. Keplinger:
"Temperature dependency of silicon structures for magnetic field gradient sensing";
Journal of Micromechanics and Microengineering, 28 (2017), 2; S. 025002.

This work describes the temperature dependence of two sensors for magnetic field gradient
sensors and demonstrates a structure to compensate for the drift of resonance frequency over
a wide temperature range. The temperature effect of the sensing element is based on internal
stresses induced by the thermal expansion of material, therefore FEM is used to determine the
change of the eigenvalues of the sensing structure. The experimental setup utilizes a Helmholtz
coil system to generate the magnetic field and to excite the MEMS structure with Lorentz forces.
The MEMS structure is placed on a plate heated with resistors and cooled by a Peltier element to
control the plate temperature. In the second part, we describe how one can exploit temperature
sensitivity for temperature measurements and we show the opportunity to include the temperature
effect to increase the sensitivity of single-crystal silicon made flux density gradient sensors.

This work describes the temperature dependence of two sensors for magnetic field gradient
sensors and demonstrates a structure to compensate for the drift of resonance frequency over
a wide temperature range. The temperature effect of the sensing element is based on internal
stresses induced by the thermal expansion of material, therefore FEM is used to determine the
change of the eigenvalues of the sensing structure. The experimental setup utilizes a Helmholtz
coil system to generate the magnetic field and to excite the MEMS structure with Lorentz forces.
The MEMS structure is placed on a plate heated with resistors and cooled by a Peltier element to
control the plate temperature. In the second part, we describe how one can exploit temperature
sensitivity for temperature measurements and we show the opportunity to include the temperature
effect to increase the sensitivity of single-crystal silicon made flux density gradient sensors.

gradient sensor, temperature dependency, magnetic field, MEMS

http://dx.doi.org/10.1088/1361-6439/aa7d28