Talks and Poster Presentations (with Proceedings-Entry):
J. Franco, V. Putcha, A. Vais, S. Sioncke, N. Waldron, D. Zhou, G. Rzepa, P. Roussel, G. Groeseneken, M. Heyns, N. Collaert, D. Linten, T. Grasser, B. Kaczer:
"Characterization of Oxide Defects in InGaAs MOS Gate Stacks for High-Mobility n-Channel MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, CA, USA (invited);
2017-12-02
- 2017-12-06; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2017),
4 pages.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM.2017.8268347
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/CP2018_Franco_1.pdf
Created from the Publication Database of the Vienna University of Technology.