Talks and Poster Presentations (with Proceedings-Entry):
A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
"Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Austin, Texas, USA;
2018-09-24
- 2018-09-26; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2018),
ISBN: 978-1-5386-6788-0;
336
- 339.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2018.8551728
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/CP2018_Toifl_1.pdf
Created from the Publication Database of the Vienna University of Technology.