Publications in Scientific Journals:
M. Sistani, M. Seifner, M. Bartmann, J. Smoliner, A. Lugstein, S. Barth:
"Electrical characterization and examination of temperature-induced degradation of metastable Ge0.81Sn0.19 nanowires";
Nanoscale,
10
(2018),
19443
- 19449.
English abstract:
Metastable germanium-tin alloys are promising materials for optoelectronics and optics. Here we present the first electrical characterization of highly crystalline Ge0.81Sn0.19 nanowires grown in a solution-based process. The investigated Ge0.81Sn0.19 nanowires reveal ohmic behavior with resistivity of the nanowire material in the range of ∼1 × 10−4 Ω m. The temperature-dependent resistivity measurements demonstrate the semiconducting behavior. Moreover, failure of devices upon heating to moderate temperatures initiating material degradation has been investigated to illustrate that characterization and device operation of these highly metastable materials have to be carefully conducted.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1039/c8nr05296d
Created from the Publication Database of the Vienna University of Technology.