Publications in Scientific Journals:
T. Knobloch, G. Rzepa, Yu. Illarionov, M. Waltl, F. Schanovski, B. Stampfer, M. M. Furchi, T. Müller, T. Grasser:
"A Physical Model for the Hysteresis in MoS2 Transistors";
IEEE Journal of the Electron Devices Society,
6
(2018),
1;
972
- 978.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/JEDS.2018.2829933
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/JB2018_Knobloch_1.pdf
Created from the Publication Database of the Vienna University of Technology.