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Zeitschriftenartikel:

Y. Berencén, S. Prucnal, W. Moeller, R. Hübner, L. Rebohle, T. Schönherr, M. Bilal Khan, M. Wang, M. Glaser, Y. Georgiev, A. Erbe, A. Lugstein, M. Helm, S. Zhou:
"Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping";
Nanotechnology, 29 (2018), 47; S. 474001 - 474007.



Kurzfassung englisch:
A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires (NWs) is
presented. P and B atoms are laterally implanted at different depths in the Si core. The healing
of the implantation-related damage together with the electrical activation of the dopants takes
place via solid phase epitaxy driven by millisecond-range ï¨'ash lamp annealing. Electrical
measurements through a bevel formed along the NW enabled us to demonstrate the concurrent
formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might
pave the way for ion beam doping of nanostructured semiconductors produced by using either
top-down or bottom-up approaches.


"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/1361-6528/aadfb6


Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.