Publications in Scientific Journals:
K. Puschkarsky, H. Reisinger, T. Aichinger, W. Gustin, T. Grasser:
"Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation";
IEEE Transactions on Device and Materials Reliability,
18
(2018),
2;
144
- 153.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TDMR.2018.2813063
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/JB2018_Puschkarsky_2.pdf
Created from the Publication Database of the Vienna University of Technology.