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Publications in Scientific Journals:

G. Rescher, G. Pobegen, T. Aichinger, T. Grasser:
"Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning";
Materials Science Forum, 924 (2018), 671 - 675.



"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.924.671

Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2018/JB2018_Rescher_2.pdf


Created from the Publication Database of the Vienna University of Technology.