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Publications in Scientific Journals:

M. Fischeneder, A. Bittner, M. Schneider, U. Schmid:
"Enhanced process stability for the low temperature sputter deposition of aluminium nitride thin films";
Materials Research Express, 5 (2018), 1 - 7.



English abstract:
MEMS ( micro electro-mechanical systems ) operated in resonance and excited piezoelectrically are
nowadays used for a broad range of different application scenarios. To enhance the process stability
and hence, the reproducibility of key fi lm parameters of sputter-deposited aluminium nitride such as
the fi lm stress, the piezoelectric coef fi cient d 33 and low leakage current levels, a novel aluminium
clamped substrate holder is reported. Compared to the standard molybdenum based solution, where
the thermal contact between the wafer and substrate holder varies during deposition, as the wafer can
move freely, the substrate temperature variations are substantially reduced due to clamped
con fi guration. Independent of AlN fi lm thickness ranging between 0.5 μ m and 2.0 μ m the scatter in
piezoelectric constant d 33 and leakage current characteristics represented by the barrier height and the
activation energy is reduced up to a factor of 3. These results demonstrate the importance to control
carefully the temperature conditions during low-temperature AlN deposition to ensure a high
reproducibility in fi lm properties.


"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1088/2053-1591/aac9db


Created from the Publication Database of the Vienna University of Technology.