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M. Leitgeb, Ch. Zellner, M. Dorfmeister, M. Schneider, U. Schmid:
"Buckling Porous SiC Membranes";
Talk: Eurosensors 2018, Graz, Österreich; 09-09-2018 - 09-12-2018; in: "Proceedings - Eurosensors 2018, Graz", MDPI, (2018), ISSN: 2504-3900; 1 - 4.

In preliminary studies it could be shown that single crystalline silicon carbide wafers can
be porosified with metal assisted photochemical etching. Furthermore, the generation of porous
areas which are locally defined is possible with this method. By adjusting the etching parameters, a
highly porous layer (degree of porosity of 90%) can be formed which is under-etched by a line of
breakage. By depositing a compressively stressed amorphous SiC:H thin film on top of a porous
region, the a-SiC:H film can be locally separated from the substrate, resulting in a buckled
membrane configuration. Such membranes might open up potential applications in MEMS design
concepts.