Publications in Scientific Journals:
L. Linhart, J. Burgdörfer, F. Libisch:
"Accurate modeling of defects in graphene transport calculations";
Physical Review B,
97
(2018),
035430.
English abstract:
We present an approach for embedding defect structures modeled by density functional theory into large-scale tight-binding simulations. We extract local tight-binding parameters for the vicinity of the defect site using Wannier functions. In the transition region between the bulk lattice and the defect the tight-binding parameters are continuously adjusted to approach the bulk limit far away from the defect. This embedding approach allows for an accurate high-level treatment of the defect orbitals using as many as ten nearest neighbors while keeping a small number of nearest neighbors in the bulk to render the overall computational cost reasonable. As an example of our approach, we consider an extended graphene lattice decorated with Stone-Wales defects, flower defects, double vacancies, or silicon substitutes. We predict distinct scattering patterns mirroring the defect symmetries and magnitude that should be experimentally accessible.
Keywords:
graphene, defects, quantum transport
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1103/PhysRevB.97.035430
Electronic version of the publication:
https://publik.tuwien.ac.at/files/publik_277868.pdf
Created from the Publication Database of the Vienna University of Technology.