Zeitschriftenartikel:
K. Schwendtner, U. Kolitsch:
"CsGa(HAsO4)2, the first Ga representative of the RbAl(HAsO4)2 structure type";
Acta Crystallographica Section E: Crystallographic Communications,
-
(2019),
75;
S. 346
- 349.
Kurzfassung englisch:
The crystal structure of hydrothermally synthesized (T = 493 K, 7 d) caesium gallium bis[hydrogen arsenate(V)], CsGa(HAsO4)2, was solved by single-crystal X-ray diffraction. The compound crystallizes in the common RbAl(HAsO4)2 structure type (R32) and consists of a basic tetrahedral-octahedral framework topology that houses Cs+ cations in its channels. The AsO4 tetrahedron is disordered over two positions with site occupancy factors of 0.946 (1) and 0.054 (1). Strong hydrogen bonds strengthen the network. The structure was refined as inversion twin.
"Offizielle" elektronische Version der Publikation (entsprechend ihrem Digital Object Identifier - DOI)
http://dx.doi.org/10.1107/S2056989019002081
Erstellt aus der Publikationsdatenbank der Technischen Universität Wien.