Publications in Scientific Journals:
A. Dervic, B. Steindl, M. Hofbauer, H. Zimmermann:
"High-voltage active quenching and resetting circuit for SPADs in 0.35 μm CMOS for raising the photon detection probability";
Optical Engineering,
Vol. 58
(2019),
No. 4;
1
- 4.
English abstract:
A fully integrated single-photon avalanche diode (SPAD) using a high-voltage quenching circuit fabricated in a 0.35-μm CMOS process is proposed. The quenching circuit features a quenching voltage of 9.9 V, which is three times the nominal supply voltage to increase the photon detection probability (PDP). To prove the quenching performance, the circuit has been integrated together with a large-area SPAD having an active diameter of 90 μm. Experimental verification shows a maximum PDP of 67.8% at 9.9 V excess bias at a wavelength of 642 nm.
Keywords:
single-photon avalanche diode; active quenching; high-voltage quenching; photon detection probability; optoelectonic inte-grated circuits; photodetectors.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1117/I.OE.58.4.040501
Created from the Publication Database of the Vienna University of Technology.