Publications in Scientific Journals:
M. Seifner, M. Sistani, I. Zivadinovic, M. Bartmann, A. Lugstein, S. Barth:
"Drastic Changes in Material Composition and Electrical Properties of Gallium-Seeded Germanium Nanowires";
Crystal Growth & Design,
19
(2019),
2531
- 2536.
English abstract:
Varying the growth conditions of gallium-seeded germanium nanostructures leads to significant variations in morphology, and particularly of the electronic properties inducing a transition from the hyperdoping regime to intrinsic germanium crystal formation. The consumption of the growth seed leads to cone-type nanostructures with incorporation of ∼3.8 ± 0.7 at% Ga in Ge at temperatures below 350 °C, while a high density of Ge nanowires with constant diameter can be obtained at higher temperatures. The high-temperature Ga-seeded Ge nanowires exhibit electronic properties of intrinsic Ge nanowires.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1021/acs.cgd.9b00210
Created from the Publication Database of the Vienna University of Technology.