Publications in Scientific Journals:
A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, T. Grasser, J. Weinbub:
"Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET Characteristics";
IEEE Transactions on Electron Devices,
66
(2019),
7;
3060
- 3065.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2019.2916929
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2019_Toifl_1.pdf
Created from the Publication Database of the Vienna University of Technology.