Talks and Poster Presentations (with Proceedings-Entry):
M. Current, G. Hobler, Y. Kawasaki:
"Aspects of Highly-channeled MeV Implants of Dopants in Si(100)";
Talk: 19th International Workshop on Junction Technology 2019,
Kyoto, Japan (invited);
2019-06-06
- 2019-06-07; in: "19th International Workshop on Junction Technology 2019",
(2019),
ISBN: 978-4-86348-728-4;
40
- 45.
English abstract:
This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.
Keywords:
channeling, MeV dopant implants in Si, Monte-Carlo modeling
Electronic version of the publication:
https://publik.tuwien.ac.at/files/publik_280293.pdf
Created from the Publication Database of the Vienna University of Technology.