Vorträge und Posterpräsentationen (mit Tagungsband-Eintrag):

M. Current, G. Hobler, Y. Kawasaki:
"Aspects of Highly-channeled MeV Implants of Dopants in Si(100)";
Vortrag: 19th International Workshop on Junction Technology 2019, Kyoto, Japan (eingeladen); 06.06.2019 - 07.06.2019; in: "19th International Workshop on Junction Technology 2019", (2019), ISBN: 978-4-86348-728-4; S. 40 - 45.

Kurzfassung englisch:
This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.

channeling, MeV dopant implants in Si, Monte-Carlo modeling

Elektronische Version der Publikation:

Erstellt aus der Publikationsdatenbank der Technischen Universitšt Wien.