Publications in Scientific Journals:

Yu. Illarionov, A. Banshchikov, D.K Polyushkin, S. Wachter, T. Knobloch, M. Thesberg, M. I. Vexler, M. Waltl, M. Lanza, N. S. Sokolov, A. Müller, T. Grasser:
"Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators";
2D Materials, 6 (2019), 4; 045004.

"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)

Electronic version of the publication:

Created from the Publication Database of the Vienna University of Technology.