Talks and Poster Presentations (with Proceedings-Entry):
A. Toifl, M. Quell, A. Hössinger, A. Babayan, S. Selberherr, J. Weinbub:
"Novel Numerical Dissipation Scheme for Level-Set Based Anisotropic Etching Simulations";
Talk: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Udine, Italy;
2019-09-04
- 2019-09-06; in: "Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)",
(2019),
ISBN: 978-1-7281-0938-1;
327
- 330.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/SISPAD.2019.8870443
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/CP2019_Toifl_1.pdf
Created from the Publication Database of the Vienna University of Technology.