Patents:
J. Konrath, R. Kern, S. Krivec, L Stöber, U. Schmid:
"Methods for Manufacturing a Semiconductor Device Having a non-ohmic Contact Formed between a Semiconductor Material and an Electrically Conductive Contact Layer";
Patent: USA,
No. Us 10,199,514,B2;
submitted: 01-09-2018,
granted: 02-05-2019.
English abstract:
An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises SiC and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. The electrically conductive contact layer comprises a meta! nitride with a nitro gen content between 10 to 50 atomic %. Additional embodiments of manufacturing a semiconductor device are described.
Created from the Publication Database of the Vienna University of Technology.