Patents:
J. Konrath, R. Kern, S. Krivec, U. Schmid, L Stöber:
"Semiconductor Device With Non-Ohmic Contact Between Sic And A Contact Layer Containing Metal Nitride";
Patent: USA,
No. Us 10,431,698 B2;
submitted: 01-02-2019,
granted: 10-01-2019.
English abstract:
According to an embodiment of a semiconductor device, the semiconductor device includes a contact layer in contact with SiC material. The contact layer includes a meta! nitride having a nitrogen content in a range of 10 to 50 atomic %. The semiconductor device further includes a non-ohmic contact formed between the SiC material and the contact layer.
Created from the Publication Database of the Vienna University of Technology.