R. Gupta, B. Kaur, J. Carrete, C. Bera:
"A theoretical model of the thermoelectric properties of SnSxSe1−x and how to further enhance its thermoelectric performance";
Journal of Applied Physics, 126 (2019), 225105.

Kurzfassung englisch:
Tin-based chalcogenides have a lot of potential as thermoelectric materials due to their ultralow thermal conductivity. Therefore, most
reports on doped SnS focus on its power factor as the other condition for a high thermoelectric figure of merit (ZT). Here, we use the
Boltzmann transport formalism to calculate both the power factor and the thermal conductivity for SnS, SnSe, and SnSxSe1 x and compare
it with experimental measurements. Our theoretical model, based on a relaxation-time formalism, is in very good agreement with the
reported values. We conclude that, while impurity scattering plays a major role in electron transport and, therefore, largely determines the
power factor, alloy scattering is crucial for phonon transport. Specifically, alloying reduces the thermal conductivity of SnSe0:70S0:30 by a
factor of 1:3 compared to SnSe and by a factor of 2 compared to SnS. This leads to 65% and 33% enhancements of ZT for p-type
and n-type doping, respectively, at 800 K with respect to SnSe.

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