Talks and Poster Presentations (with Proceedings-Entry):
R. Hrdy, J. Prasek, P. Fillner, S. Vancik, J. Hubalek, U. Schmid:
"Development of HfO2/Al2O3 Stack for On-Chip Capacitor Applications";
Talk: 42nd International Spring Seminar on Electronics Technology - ISSE2019,
Wroclaw, Polen;
05-15-2019
- 05-19-2019; in: "42nd International Spring Seminar on Electronics Technology",
(2019),
ISBN: 978-83-7493-070-3;
183
- 184.
English abstract:
We presented the development and characterization of high-k stack
HfO2/Al2O3 capacitor, fabricated directly on chip. The capacitor is based on nanolaminates
material directly grown by plasma-assisted Atomic Layer Deposition (ALD) in a single
reactor chamber. The deposition process was performed at a single temperature (250°C). We
tested the various numbers of layers in the stack, compared the electrical and material
characterizations. Using the optimal deposition conditions, we obtained structure with
nanolaminates of single thickens 5Å, capacitance density of 1.10-12 F.μm-2 and leakage
current density of 1.10-9 A.cm-2
Created from the Publication Database of the Vienna University of Technology.