Publications in Scientific Journals:
J. Berens, G. Pobegen, T. Eichinger, G. Rescher, T. Grasser:
"Cryogenic Characterization of NH3 Post Oxidation Annealed 4H-SiC Trench MOSFETs";
Materials Science Forum,
963
(2019),
175
- 179.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.4028/www.scientific.net/MSF.963.175
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Berens_1.pdf
Created from the Publication Database of the Vienna University of Technology.