Publications in Scientific Journals:
R. Bernhard, G. Pobegen, M. Rösch, R. Vytla, T. Grasser:
"Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs";
IEEE Transactions on Device and Materials Reliability,
19
(2019),
1;
133
- 139.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TDMR.2019.2891794
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Ruch-1.pdf
Created from the Publication Database of the Vienna University of Technology.