Publications in Scientific Journals:
J. Berens, G. Pobegen, G. Rescher, T. Aichinger, T. Grasser:
"NH3 and NO + NH3 Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability";
IEEE Transactions on Electron Devices,
66
(2019),
11;
4692
- 4697.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2019.2941723
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Berens_2.pdf
Created from the Publication Database of the Vienna University of Technology.