Talks and Poster Presentations (with Proceedings-Entry):
C. Schleich, J. Berens, G. Rzepa, G. Pobegen, G. Rescher, S. E. Tyaginov, T. Grasser, M. Waltl:
"Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs";
Talk: IEEE International Electron Devices Meeting (IEDM),
San Francisco, USA;
2019-12-07
- 2019-12-11; in: "Proceedings of the IEEE International Electron Devices Meeting (IEDM)",
(2019).
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IEDM19573.2019.8993446
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/CP2019_Schleich_1.pdf
Created from the Publication Database of the Vienna University of Technology.