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Publications in Scientific Journals:

K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
"Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
IEEE Transactions on Electron Devices (invited), 66 (2019), 11; 4604 - 4616.



"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2019.2938262

Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Puschkarsky_2.pdf


Created from the Publication Database of the Vienna University of Technology.