Publications in Scientific Journals:
K. Puschkarsky, T. Grasser, T. Aichinger, W. Gustin, H. Reisinger:
"Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability";
IEEE Transactions on Electron Devices (invited),
66
(2019),
11;
4604
- 4616.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/TED.2019.2938262
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/JB2020_Puschkarsky_2.pdf
Created from the Publication Database of the Vienna University of Technology.