Talks and Poster Presentations (with Proceedings-Entry):
M. Waltl:
"Characterization and Modeling of Single Charge Trapping in MOS Transistors";
Talk: IEEE International Integrated Reliability Workshop (IIRW),
South Lake Tahoe, CA, USA (invited);
2019-10-13
- 2019-10-17; in: "Proceedings of the IEEE International Integrated Reliability Workshop (IIRW)",
(2019),
1
- 9.
"Official" electronic version of the publication (accessed through its Digital Object Identifier - DOI)
http://dx.doi.org/10.1109/IIRW47491.2019.8989880
Electronic version of the publication:
http://www.iue.tuwien.ac.at/pdf/ib_2019/CP2019_Waltl_1.pdf
Created from the Publication Database of the Vienna University of Technology.