[Zurück]

F. Triendl, G. Pfusterschmied, Ch. Zellner, W. Artner, K. Hradil, U. Schmid:
"Low-temperature epitaxial Si on 4H-SiC using metal-induced crystallization";
Materials Letters: X, 6 (2020), S. 1 - 4.

Metal induced crystallization using aluminum (Al) as catalytic metal was applied to achieve lowtemperature
crystallization of amorphous silicon (a-Si) on 4H-SiC. Epitaxial crystallization of Si grains
was found to occur on off-axis 4H-SiC at very low temperatures using X-ray diffractometry (XRD). Insitu
heating XRD measurements revealed an onset of the crystallization process at temperatures as low
as 220 C on Si- and C-face SiC, respectively. Cross-sectional imaging with scanning electron microscopy
showed an almost complete layer transfer between Si and the Al metallization after annealing.

http://dx.doi.org/10.1016/j.mlblux.2020.100040